PART |
Description |
Maker |
TC704 |
Kocetal TC704 is Mineral reinforced grade for good dimensional stability.
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List of Unclassifed Manufacturers
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16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact HTSNK, C X-FLOW, .4H LOW FLOW, THREADED HTSNK C X-FLOW .4H LOW FLOW THREADED
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VICOR[Vicor Corporation]
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IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
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15960 15960-A |
HTSNK A X-FLOW .9H LOW FLOW THREADED HTSNK, A X-FLOW, .9H LOW FLOW, THREADED
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VICOR[Vicor Corporation]
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CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
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Cypress Semiconductor, Corp.
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M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽,引导块.8V电源快闪记忆 KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
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STMicroelectronics N.V. http:// ST Microelectronics
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CY7C1351F CY7C1351F-100AC CY7C1351F-100AI CY7C1351 |
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 11 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PQFP100 4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119 4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture 4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
WT7510 WT7510-N080WT-12 WT7510-S080WT-12 |
The Over Voltage Detector (OVD) monitors 3.3V, 5V, 12V input voltage level protection circuits/ power good output (PGO)/ fault protection latch (FPL_N) CONTROL protection circuits power good output (PGO) fault protection latch (FPL_N) CONTROL protection circuits, power good output (PGO), fault protection latch (FPL_N) CONTROL
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List of Unclassifed Man... ETC[ETC] List of Unclassifed Manufacturers Unknow
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CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC |
64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM) 64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture From old datasheet system
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Cypress Semiconductor Corp.
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15989 15989-A |
BOX 2.13X1.38X.58 W/CLP BLK HTSNK B LONG .9H LOW FLOW, THREADED HTSNK B LONG .9H LOW FLOW THREADED
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VICOR[Vicor Corporation]
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